1416GN-600V |
Product Status
In Production |
Overview
The 1416GN-600V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.8dB gain, 600 Watts of pulsed RF output power at 300?s pulse width, 10% duty factor across the 1400 to 1600 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for broadband avionics data link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
Resources
Datasheets | |
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1416GN-600V Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Product Briefs | |
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1416GN Class AN GaN-on-SiC HEMT Transistors |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
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