2731GN-280LV |
Product Status
In Production |
Overview
The 2731GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.77 dB gain, 280 Watts of pulsed RF output power at 200uS pulse width, 20% duty factor across the 2700 to 3100 MHz band. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application – 2731GN-280LV is designed for S-Band Pulsed Radar |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 58 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 15 | % | ||
Frequency (GHz) | F | 2.7 | 3 | GHz | |
Gain | G | 15.4 | dB | ||
Output Power (W) | POUT | 335 | W | ||
Pulse Width (PW) | τ | 200 | µs |
Resources
Datasheets | |
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2731GN-280LV Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules S-Band Pulsed Primary Radar Output Stage