5359GN-70V |
Product Status
Sampling |
Overview
The 5359GN-70V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 10 dB gain, 70 Watts of pulsed RF output power at 200uS pulse width, 10% duty factor across the 5300 to 5900 MHz band. This hermetically sealed transistor is designed for C-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application – 5359GN-70V is designed for C-Band Pulsed Radar |
Resources
Datasheets | |
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5359GN-70V Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
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